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IPP60R190C6 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPP60R190C6 product

IPP60R190C6

MOSFETs - Single

MOSFETCoolMOSInfineon600V

The IPP60R190C6 is a high-performance 600V N-channel superjunction MOSFET optimized for high-efficiency power conversion.

Best for

  • PFC stages
  • Resonant switching PWM

Avoid if

  • Low-voltage applications where lower Rds(on) or different package types are required.

Check before use

  • Thermal dissipation requirements and gate drive circuit design.

Key specifications

Vds
600 V
Id
20.2 A
Rds(on)
0.19 Ohm

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

e85495e49e2f7ec6588efc70d92056e5.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPP60R190C6: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 600V CoolMOS C6 power MOSFET from Infineon, designed for high-efficiency switching applications.