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IPT007N06N AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPT007N06N product

IPT007N06N

MOSFETs - Single

N-Channel60VPower MOSFETOptiMOS

The IPT007N06N is a high-performance 60V N-channel OptiMOS™ power MOSFET designed for high-current applications requiring low conduction losses.

Best for

  • High-current power supplies
  • Motor control
  • Automotive applications

Avoid if

  • Low-power, space-constrained designs where smaller packages are required.

Check before use

  • Ensure the PCB layout supports the high current density and thermal dissipation requirements of the HSOF-8-1 package.

Key specifications

VDS
60 V
ID
300 A
RDS(on)
0.75 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

e7580572d64371e17766539455cce238.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPT007N06N: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET from Infineon, optimized for high-efficiency power conversion with a 60V rating and 300A current capacity.