IPT012N08N5 Datasheet, Specs, Alternatives & ECAD | Infineon | PartGenie

AI summary

IPT012N08N5 product

The IPT012N08N5 is a high-performance 80V N-channel power MOSFET from Infineon, optimized for high-efficiency power management and switching applications.

Best for

Synchronous rectification
High-frequency power conversion

Avoid if

Low-power, space-constrained applications where smaller packages are required

Check before use

Thermal dissipation requirements
Gate drive voltage levels

Key specifications

VDS: 80 V
ID: 300 A
RDS(on): 1.2 mΩ

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power Management

Datasheet

pYYBAGMksKGAIjW5ABMX6l6XyMQ905.pdf

800 KB

CAD Models

Download ECAD models for IPT012N08N5: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 5 N-channel power MOSFET designed for high-frequency switching and synchronous rectification.