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IPT60R022S7 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPT60R022S7 product

IPT60R022S7

MOSFETs - Single

MOSFETCoolMOS600VPower Device

The IPT60R022S7 is a high-performance 600V CoolMOS S7 SJ MOSFET designed for high-current, low-frequency switching applications.

Best for

  • Solid state relays
  • Circuit breakers
  • Line rectification

Avoid if

  • High-frequency switching applications

Check before use

  • Gate resistor placement on the Driver Source pin

Key specifications

VDS
600 V
RDS(on)
22 mΩ
ID
23 A
Package
PG-HSOF-8

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

c7de01943d7a42b08b9592e4c2857133_2005292218_Infineon-Technologies-IPT60R022S7_C531208.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPT60R022S7: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 600V N-channel Superjunction (SJ) MOSFET from Infineon, optimized for static switching and high-current applications.