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IPW60R099P6 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPW60R099P6 product

IPW60R099P6

MOSFETs - Single

MOSFETCoolMOS600VPower Transistor

The IPW60R099P6 is a high-performance 600V N-channel superjunction MOSFET designed for high-efficiency power conversion.

Best for

  • Server power supplies
  • Telecom infrastructure
  • Industrial power conversion

Avoid if

  • Low-voltage battery-powered applications
  • Designs where space is extremely limited (consider smaller packages)

Check before use

  • Gate drive design
  • Thermal dissipation requirements

Key specifications

VDS
600 V
RDS(on)
99 mOhm
ID
37.9 A

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

poYBAGLoaMaARIBrACN3PVhP5M4582.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPW60R099P6: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 600V CoolMOS P6 power transistor utilizing superjunction technology, optimized for high-efficiency power supplies.