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IR2110STR(UMW) AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IR2110STR(UMW) product

IR2110STR(UMW)

MOSFETs - Single

Gate Driver600VHalf-Bridge

The UMW IR2110STR is a high-speed, 600V half-bridge gate driver designed for MOSFETs and IGBTs, offering 4A peak current capability.

Best for

  • Half-bridge and full-bridge power converters
  • Motor control applications

Avoid if

  • Applications requiring galvanic isolation (this is a non-isolated driver)

Check before use

  • Bootstrap circuit design
  • Negative transient voltage immunity

Key specifications

Max Voltage
600V
Peak Current
4A
Temp Range
-40°C to 125°C

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesMotor Control

Datasheet

35c4830cad72edeede91234ab0ee3cfd_2405061102_UMW-Youtai-Semiconductor-Co---Ltd--IR2110STR-UMW_C20623179.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IR2110STR(UMW): KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage, high-speed power MOSFET/IGBT driver with independent high and low-side outputs, capable of driving N-channel power MOSFETs in high-side configurations up to 600V.