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IRF100S201-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRF100S201-HXY product

IRF100S201-HXY

MOSFETs - Single

MOSFETN-Channel100VPower

The IRF100S201 is a high-performance 100V N-channel SGT MOSFET in a TO-263 package, optimized for high-current power management and motor control.

Best for

  • Motor control
  • Synchronous rectification
  • Isolated DC-DC converters

Avoid if

  • Space-constrained designs requiring smaller packages than TO-263

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
100 V
ID
260 A
RDS(on)
4.2 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Supplies

Datasheet

0236195b217c5bc8ca99f66151ca242c_2403261740_HXY-MOSFET-IRF100S201-HXY_C22367077.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRF100S201-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel SGT (Shielded Gate Trench) enhancement mode MOSFET designed for high-efficiency power switching.