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IRF3710STRPBF-JSM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRF3710STRPBF-JSM product

IRF3710STRPBF-JSM

MOSFETs - Single

N-ChannelMOSFET100VTO-263

The IRF3710STRPBF-JSM is a 100V, 60A N-Channel MOSFET in a TO-263 package, suitable for high-power switching applications.

Best for

  • Power switching
  • DC-DC converters

Avoid if

  • Low-voltage logic level applications without sufficient gate drive

Check before use

  • Thermal design and heat sinking

Key specifications

Vdss
100 V
Id
60 A
Rds(on)
17.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

bf2d6e162c8483d53af63ef59ff0ec04_2404081026_JSMSEMI-IRF3710STRPBF-JSM_C18191880.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRF3710STRPBF-JSM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel power MOSFET utilizing trench technology, designed for high-current and high-voltage applications.