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IRF5801TRPBF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRF5801TRPBF product

IRF5801TRPBF

MOSFETs - Single

MOSFETN-Channel200V

The IRF5801PbF is a 200V N-Channel HEXFET Power MOSFET designed for high-frequency DC-DC converters, featuring low gate charge and a compact TSOP-6 package.

Best for

  • High-frequency DC-DC converters

Avoid if

  • Applications requiring high continuous current > 0.6A

Check before use

  • Thermal dissipation on PCB

Key specifications

VDS
200 V
ID
0.6 A
RDS(on)
2.2 Ω

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

DC-DC Converters

Datasheet

DSA-282896.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRF5801TRPBF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 200V N-Channel power MOSFET optimized for high-frequency switching applications.