ProjectsPricingInsights

IRF630-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRF630-HXY product

IRF630-HXY

MOSFETs - Single

MOSFETN-Channel200VPower

The IRF630-HXY is a 200V, 9A N-Channel MOSFET in a TO-220AB package, designed for high-efficiency power switching applications.

Best for

  • Switch mode power supplies
  • Power factor correction

Avoid if

  • Applications requiring extremely low RDS(ON) or surface-mount packaging

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
200 V
ID
9 A
RDS(ON)
260 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial

Datasheet

a5ad7c3b2a9f7b414e798034639df9e6_2406071737_HXY-MOSFET-IRF630-HXY_C19267788.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRF630-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology, optimized for power management applications.