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IRF640NPBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRF640NPBF-HXY product

IRF640NPBF-HXY

MOSFETs - Single

MOSFETN-Channel200VTO-220

The IRF640NPBF is a 200V, 18A N-Channel MOSFET in a TO-220AB package, optimized for high-efficiency power conversion applications.

Best for

  • Power supply switching
  • PFC stages

Avoid if

  • Applications requiring extremely low RDS(on) below 100mΩ

Check before use

  • Thermal management requirements

Key specifications

VDS
200 V
ID
18 A
RDS(on)
145 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

c16b18ed080ac4de8f8230019dd4a254_2312041214_HXY-MOSFET-IRF640NPBF-HXY_C19267789.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRF640NPBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using advanced trench technology, rated for 200V and 18A.