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IRF7103PBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRF7103PBF-HXY product

IRF7103PBF-HXY

MOSFETs - Arrays

MOSFETDual N-Channel60VSOP-8

The IRF7103PBF is a dual N-channel enhancement mode MOSFET in an SOP-8 package, designed for 60V, 6.5A switching applications.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power applications exceeding 2.1W dissipation

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
6.5 A
RDS(ON)
36 mΩ (10V)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

c5befd431765c9f5dc5deb35adfc5872_2404231036_HXY-MOSFET-IRF7103PBF-HXY_C22366502.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRF7103PBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET using trench technology, suitable for battery protection and load switching.