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IRF740-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRF740-HXY product

IRF740-HXY

MOSFETs - Single

MOSFETN-ChannelPowerTO-220

The IRF740 is a 420V, 11A N-Channel MOSFET in a TO-220AB package, designed for high-efficiency power conversion applications.

Best for

  • Switch mode power supplies
  • Power factor correction

Avoid if

  • Applications requiring extremely low voltage or high-frequency switching beyond the device's capability.

Check before use

  • Thermal design and gate drive voltage levels.

Key specifications

VDS
420 V
ID
11 A
RDS(on)
0.5 Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial

Datasheet

542a8212d83288bee93e83b00b2653cf_2312221750_HXY-MOSFET-IRF740-HXY_C19723846.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRF740-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The IRF740 is an N-Channel enhancement mode MOSFET using advanced trench technology, optimized for low RDS(on) and gate charge.