ProjectsPricingInsights

IRF9389PBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRF9389PBF-HXY product

IRF9389PBF-HXY

MOSFETs - Arrays

MOSFETDual ChannelSOP-8

The IRF9389PBF is a dual N+P-channel enhancement mode MOSFET in an SOP-8 package, designed for battery protection and switching applications.

Best for

  • Battery management systems
  • Compact power switching

Avoid if

  • High-current applications exceeding 7A/8.5A

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
30V / -30V
ID
7A / -8.5A
RDS(on)
25mΩ / 35mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

bf7a3006e6bdd10293ecd2f1fe29275d_2404231036_HXY-MOSFET-IRF9389PBF-HXY_C22366931.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRF9389PBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel and P-channel enhancement mode MOSFET integrated into a single SOP-8 package, utilizing advanced trench technology.