IRF9393PBF-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

IRF9393PBF-HXY product

The IRF9393PBF is a P-Channel enhancement mode MOSFET in an SOP-8 package, optimized for low RDS(ON) and efficient switching in battery protection and power management circuits.

Best for

Battery protection
Load switching

Avoid if

Applications requiring higher than 11A continuous current

Check before use

Thermal design
Gate drive voltage levels

Key specifications

VDS: -30 V
ID: -11 A
RDS(on): 16 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementBattery Protection

Datasheet

012d5a957aa6b4b433569f7636b3c5d3_2404231036_HXY-MOSFET-IRF9393PBF-HXY_C22366867.pdf

800 KB

CAD Models

Download ECAD models for IRF9393PBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel MOSFET using advanced trench technology, designed for low gate charge and low on-resistance.