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IRF9956PBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRF9956PBF-HXY product

IRF9956PBF-HXY

MOSFETs - Arrays

MOSFETDual N-ChannelSOP-8

The IRF9956PBF is a dual N-channel MOSFET in an SOP-8 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery management
  • Load switching

Avoid if

  • High-power applications exceeding 2W dissipation

Check before use

  • Gate drive voltage levels

Key specifications

Vdss
30 V
Id
6 A
RDS(on)
30 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

f9bc235630f29b56de40c496877ebab0_2404231036_HXY-MOSFET-IRF9956PBF-HXY_C22366595.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRF9956PBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET using trench technology, designed for efficient switching at low gate voltages.