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IRFB4115PBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRFB4115PBF-HXY product

IRFB4115PBF-HXY

MOSFETs - Single

N-ChannelMOSFET150VPower

The IRFB4115PBF is a 150V, 120A N-channel SGT MOSFET in a TO-220S package, optimized for high-ruggedness power applications.

Best for

  • Motor control
  • Synchronous rectification
  • Isolated DC-DC converters

Avoid if

  • Low-voltage applications where lower RDS(on) devices are available
  • Space-constrained designs requiring SMD packages

Check before use

  • Thermal dissipation requirements
  • Gate driver peak current capability

Key specifications

VDS
150 V
ID
120 A
RDS(on)
11.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SupplyMotor Control

Datasheet

fae391c49294b0a05315c09763451ead_2308221404_HXY-MOSFET-IRFB4115PBF-HXY_C7543028.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRFB4115PBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel SGT (Shielded Gate Trench) enhancement mode MOSFET designed for high-efficiency power switching.