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IRFB4227PBF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRFB4227PBF product

IRFB4227PBF

MOSFETs - Single

MOSFETN-Channel200VTO-220AB

The IRFB4227PBF is a 200V, 65A N-Channel HEXFET Power MOSFET in a TO-220AB package, specifically optimized for high-efficiency PDP sustain, energy recovery, and Class-D audio applications.

Best for

  • PDP sustain circuits
  • Energy recovery applications
  • Class-D audio amplifiers (300W-500W)

Avoid if

  • Surface mount assembly is required
  • Low-voltage logic level gate drive is needed without a driver

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vdss
200 V
Id
65 A
Rds(on)
19.7 mOhm (typ)

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

International-Rectifier-company-55.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRFB4227PBF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Power MOSFET from Infineon, designed for high-performance switching applications like Plasma Display Panel (PDP) drivers and Class-D audio amplifiers.