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IRFB4229PBF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRFB4229PBF product

IRFB4229PBF

MOSFETs - Single

N-ChannelMOSFET300VPower

The IRFB4229PbF is a high-performance 300V N-Channel HEXFET Power MOSFET optimized for high-speed switching applications like PDP sustain and Class-D audio.

Best for

  • PDP sustain circuits
  • Class-D audio amplifiers
  • High-speed switching

Avoid if

  • Surface mount assembly requirements

Check before use

  • Thermal dissipation requirements at high current

Key specifications

Vdss
300 V
Id
46 A
Rds(on)
38 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

International-Rectifier-company-55.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRFB4229PBF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Power MOSFET from Infineon, specifically engineered for high-efficiency switching in PDP sustain, energy recovery, and Class-D audio amplifier circuits.