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IRFH3702PBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRFH3702PBF-HXY product

IRFH3702PBF-HXY

MOSFETs - Single

N-ChannelMOSFET30VDFN3X3-8L

The IRFH3702PBF is a 30V N-Channel MOSFET in a DFN3X3-8L package, designed for high-efficiency switching applications.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring higher than 30V VDS

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
35 A
RDS(ON)
10 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

a8b28f4aae14d4e6f1342bc947c71572_2404231036_HXY-MOSFET-IRFH3702PBF-HXY_C22366741.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRFH3702PBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, optimized for low RDS(ON) and low gate charge.