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IRFH8311PBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRFH8311PBF-HXY product

IRFH8311PBF-HXY

MOSFETs - Single

N-ChannelMOSFET30V150ADFN5X6-8L

The IRFH8311PBF is a 30V, 150A N-Channel MOSFET in a DFN5X6-8L package, optimized for low RDS(ON) and efficient switching.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring voltages significantly above 30V

Check before use

  • Thermal dissipation requirements at high current

Key specifications

VDS
30 V
ID
150 A
RDS(ON)
< 2.4 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

7dc8c78488584a4e9445b4a0aa945d65_2404231036_HXY-MOSFET-IRFH8311PBF-HXY_C22366640.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRFH8311PBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-current switching applications, featuring advanced trench technology.