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IRFHM8329PBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRFHM8329PBF-HXY product

IRFHM8329PBF-HXY

MOSFETs - Single

N-ChannelMOSFET30VDFN3X3-8L

The IRFHM8329PBF is a 30V N-Channel MOSFET in a DFN3X3-8L package, optimized for high-efficiency switching and battery protection.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Thermal design
  • Gate drive voltage

Key specifications

Vdss
30 V
Id
60 A
RDS(on)
5.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

61f562b3fe036a32693fd6a32d00bebf_2404231719_HXY-MOSFET-IRFHM8329PBF-HXY_C22366843.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRFHM8329PBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for low RDS(ON) and low gate charge applications.