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IRFP4229PBF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRFP4229PBF product

IRFP4229PBF

MOSFETs - Single

MOSFETN-ChannelPower250V

The IRFP4229PBF is a 250V N-Channel Power MOSFET optimized for high-efficiency PDP sustain and energy recovery applications.

Best for

  • PDP sustain circuits
  • Energy recovery applications
  • High-speed switching

Avoid if

  • Surface mount assembly is required
  • Low-voltage logic level gate drive is needed without a driver

Check before use

  • Thermal resistance (RθJC = 0.49°C/W)
  • Gate charge requirements for switching speed

Key specifications

VDS
250 V
ID
44 A
RDS(on)
38 mΩ
TJ max
175 °C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ManagementIndustrial Electronics

Datasheet

International-Rectifier-company-54.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRFP4229PBF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a HEXFET Power MOSFET from Infineon, specifically engineered for PDP (Plasma Display Panel) sustain, energy recovery, and pass switch circuits.