It is an N-Channel enhancement mode MOSFET designed for switching applications, featuring a 100V drain-source breakdown voltage and 30A continuous current capability.
IRFR3411TRPBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD
AI summary
Key specifications
- VDS
- 100 V
- ID
- 30 A
- RDS(on)
- 48 mΩ
- Package
- TO-252-2L
Compliance & Environment
- RoHS
- -
- REACH
- -
- MSL
- -
- ECCN
- -
- HTSUS
- -
Application
Power ManagementIndustrial
Datasheet
CAD Models
Download ECAD models for IRFR3411TRPBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.
EDA Symbol
Schematic symbol for your EDA tool
PCB Footprint
Land pattern for PCB layout
3D Model
STEP file for mechanical design
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Alternative components
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