IRFR3518 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRFR3518 product

IRFR3518

FETs

N-channel MOSFET100 VTO-25225 mΩ25 A

IRFR3518 is a 100 V N-channel TO-252 MOSFET with 25 mΩ maximum on-resistance at 10 V gate drive and a 25 A continuous-current rating at TC = 25°C.

Best for

  • 100 V low-side switching
  • Compact TO-252 power stages
  • Power conversion circuits

Avoid if

  • Drain-source transients can exceed the 100 V rating without suppression
  • Thermal dissipation cannot support the required continuous current
  • A verified compliance or lifecycle declaration is mandatory

Check before use

  • Confirm RDS(on) at the intended gate-drive voltage and junction temperature
  • Use the manufacturer-recommended TO-252 footprint and thermal copper area
  • Review body-diode recovery for hard-switching applications

Key specifications

Drain-source voltage
100 V
Continuous drain current
25 A at TC = 25°C
RDS(on)
25 mΩ max at VGS = 10 V, ID = 10 A
Gate charge
11 nC typ
Package
TO-252, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingDC-DC convertersMotor control

CAD Models

Download ECAD models for IRFR3518: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

IRFR3518 is a DOINGTER N-channel power MOSFET in a 3-pin TO-252 package. Its specified drain-source voltage rating is 100 V.