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IRFR9024N AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRFR9024N product

IRFR9024N

FETs

P-channel MOSFET-60 V-13 ATO-25290 mΩ

IRFR9024N is a -60 V P-channel TO-252 MOSFET for power switching, with -13 A continuous current capability and 90 mΩ maximum RDS(on) at -10 V gate drive.

Best for

  • P-channel high-side switching within a -60 V rating
  • Compact TO-252 power-switch designs

Avoid if

  • A lower RDS(on) requirement cannot tolerate up to 125 mΩ at -4.5 V gate drive
  • Compliance or lifecycle status must be explicitly documented

Check before use

  • Confirm VGS remains within the ±20 V absolute maximum rating
  • Use the applicable RDS(on) value for the actual gate-drive voltage
  • Confirm the TO-252 footprint against the selected mechanical outline

Key specifications

Channel
P-channel
Drain-source voltage
-60 V
Continuous drain current
-13 A at TC = 25 °C
On-resistance
90 mΩ max at VGS = -10 V, ID = -12 A
Package
TO-252, 3 pins

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchingLoad switching

Datasheet

911106d8be59a1cd36ded794fe3583b2_IRFR9024N.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRFR9024N: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

IRFR9024N is a DOINGTER P-channel trench MOSFET supplied in a 3-pin TO-252 package. Its drain-source voltage rating is -60 V and its continuous drain-current rating is -13 A at TC = 25 °C.