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IRFS4229TRLPBF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRFS4229TRLPBF product

IRFS4229TRLPBF

MOSFETs - Single

N-ChannelMOSFET250VD2Pak

The IRFS4229TRLPBF is a 250V N-Channel HEXFET Power MOSFET in a D2Pak package, specifically optimized for high-efficiency PDP sustain and energy recovery applications.

Best for

  • PDP sustain circuits
  • Energy recovery applications
  • Pass switch applications

Avoid if

  • Applications requiring extremely low voltage operation
  • Space-constrained designs where D2Pak is too large

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vds
250 V
Id
45 A
Rds(on)
42 mΩ
Max Tj
175 °C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ManagementIndustrial

Datasheet

International-Rectifier-company-54.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRFS4229TRLPBF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Power MOSFET designed by Infineon, optimized for PDP (Plasma Display Panel) sustain and energy recovery circuits.