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IRFZ44NS-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRFZ44NS-HXY product

IRFZ44NS-HXY

MOSFETs - Single

N-ChannelMOSFET55V49ATO-263

The IRFZ44NS is a 55V, 49A N-Channel MOSFET in a TO-263 (D2PAK) package, optimized for high-efficiency switching applications.

Best for

  • Switching power supplies
  • Battery protection circuits
  • Inverter systems

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal design and heat sinking requirements

Key specifications

VDS
55 V
ID
49 A
RDS(on)
13 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Switching

Datasheet

239265603a0fdbdb05bf7befff9398b1_2309131015_HXY-MOSFET-IRFZ44NS-HXY_C7469134.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRFZ44NS-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET designed for switching applications, featuring advanced trench technology.