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IRLML6402GPBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRLML6402GPBF-HXY product

IRLML6402GPBF-HXY

MOSFETs

MOSFETP-ChannelSOT-23Load Switch

The IRLML6402GPBF is a P-Channel enhancement mode MOSFET in a SOT-23 package, designed for low-voltage switching applications.

Best for

  • Load switching
  • PWM control
  • Low-voltage power management

Avoid if

  • High-current applications exceeding 4.2A
  • High-temperature environments without adequate cooling

Check before use

  • Gate drive voltage levels
  • Thermal resistance (RθJA)

Key specifications

VDS
-20 V
ID
-4.2 A
RDS(ON)
55 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementLoad Switching

Datasheet

d14bce9f6328e22965fd978d77f545ab_2404231036_HXY-MOSFET-IRLML6402GPBF-HXY_C22367041.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRLML6402GPBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET utilizing advanced trench technology, optimized for low gate charge and low RDS(ON) at gate voltages as low as 2.5V.