ProjectsPricingInsights

IRLML6402TRPBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRLML6402TRPBF-HXY product

IRLML6402TRPBF-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-23Trench

The IRLML6402TRPBF is a P-channel enhancement mode MOSFET in a SOT-23 package, optimized for low-voltage switching applications.

Best for

  • Load switching
  • PWM control
  • Power management

Avoid if

  • High-voltage applications exceeding 20V
  • High-current applications requiring significant heat sinking

Check before use

  • Gate drive voltage levels
  • Thermal design on PCB

Key specifications

VDS
-20 V
ID
-4.2 A
RDS(on)
55 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementLoad Switching

Datasheet

37c5ef780c05ca3796b4e3e523b51386_2308221404_HXY-MOSFET-IRLML6402TRPBF-HXY_C7543024.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRLML6402TRPBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel enhancement mode MOSFET using trench technology, rated for -20V and -4.2A.