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IRLR024NTRPBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRLR024NTRPBF-HXY product

IRLR024NTRPBF-HXY

MOSFETs - Single

N-ChannelMOSFET60VDPAK

The IRLR024NTRPBF is a 60V, 20A N-Channel MOSFET in a TO-252-2L package, optimized for low-voltage gate drive applications.

Best for

  • Battery management
  • General switching

Avoid if

  • High-frequency applications requiring extremely low gate charge

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

Vdss
60 V
Id
20 A
RDS(on)
32 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

43a57fede8efb0cfcc65fdbdfd71fbcb_2403261737_HXY-MOSFET-IRLR024NTRPBF-HXY_C22366770.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRLR024NTRPBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, rated for 60V and 20A.