IRLR2905ZPBF-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

IRLR2905ZPBF-HXY product

The IRLR2905ZPBF is a 60V, 50A N-Channel MOSFET in a TO-252-2L package, optimized for low RDS(on) and efficient switching in power management applications.

Best for

Battery protection
Load switching

Avoid if

Applications requiring extremely low gate drive voltages below 4.5V

Check before use

Thermal dissipation limits at high ambient temperatures

Key specifications

VDS: 60 V
ID: 50 A
RDS(on): 11 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementIndustrial

Datasheet

cda30233f152cb18ef2ccc5f7137c8c9_2401231634_HXY-MOSFET-IRLR2905ZPBF-HXY_C20606222.pdf

800 KB

CAD Models

Download ECAD models for IRLR2905ZPBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications using advanced trench technology.