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IRLR3103PBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRLR3103PBF-HXY product

IRLR3103PBF-HXY

MOSFETs - Single

N-ChannelMOSFET30V20ATO-252

The IRLR3103PBF is a 30V, 20A N-Channel MOSFET in a TO-252-2L package, optimized for low-voltage switching applications.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring voltages significantly above 30V
  • High-current designs exceeding 20A continuous

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
30 V
ID
20 A
RDS(on)
25 mΩ
Package
TO-252-2L

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ProtectionLoad Switching

Datasheet

2d37b9b7906fcc63a41621a95bddba0b_2404231036_HXY-MOSFET-IRLR3103PBF-HXY_C22366524.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRLR3103PBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for efficient switching, featuring advanced trench technology and low RDS(ON).