IRLR3636PBF-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

IRLR3636PBF-HXY product

The IRLR3636PBF is a 60V, 80A N-Channel MOSFET in a DPAK package, designed for high-efficiency switching applications like battery protection and load switches.

Best for

Battery protection
Load switching
UPS

Avoid if

Applications requiring extremely low gate drive voltages below 4.5V

Check before use

Thermal dissipation requirements
Gate drive circuit capability

Key specifications

VDS: 60 V
ID: 80 A
RDS(ON): 8.3 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementIndustrial

Datasheet

93b602595f00d65031a0dc9be3923b16_2404231036_HXY-MOSFET-IRLR3636PBF-HXY_C22366671.pdf

800 KB

CAD Models

Download ECAD models for IRLR3636PBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using advanced trench technology, optimized for low RDS(ON) and low gate charge.