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IRS2113STR(UMW) AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IRS2113STR(UMW) product

IRS2113STR(UMW)

MOSFETs - Single

Gate Driver700VHalf-Bridge

The IRS2113STR is a 700V high-side and low-side gate driver capable of 4A peak source/sink current, suitable for half-bridge power topologies.

Best for

  • Half-bridge power stages
  • High-voltage MOSFET/IGBT driving

Avoid if

  • Applications requiring integrated protection beyond UVLO and shutdown

Check before use

  • Bootstrap circuit design
  • Negative Vs transient immunity

Key specifications

Max Voltage
700V
Peak Current
4A
Temp Range
-40°C to 125°C

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesMotor Control

Datasheet

03905f9d493f09c3c5cfeef90c8fa765_2405061102_UMW-Youtai-Semiconductor-Co---Ltd--IRS2113STR-UMW_C20623178.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IRS2113STR(UMW): KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage, high-speed power MOSFET and IGBT gate driver with independent high- and low-side referenced output channels, capable of operating up to 700V.