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ISC019N03L5S-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ISC019N03L5S-HXY product

ISC019N03L5S-HXY

MOSFETs - Single

MOSFETN-Channel30VDFN5X6

The ISC019N03L5S is a 30V, 150A N-Channel MOSFET in a DFN5X6-8L package, optimized for low-resistance switching applications.

Best for

  • Battery protection
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements at high current

Key specifications

VDS
30 V
ID
150 A
RDS(ON)
2.4 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

898ecb8861caff26029005e467217038_2403261736_HXY-MOSFET-ISC019N03L5S-HXY_C22366633.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ISC019N03L5S-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET using advanced trench technology, designed for high-efficiency switching.