ProjectsPricingInsights

ISC026N03L5S-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ISC026N03L5S-HXY product

ISC026N03L5S-HXY

MOSFETs - Single

MOSFETN-Channel30VDFN5X6

The ISC026N03L5S is a 30V, 150A N-Channel MOSFET in a DFN5X6-8L package, optimized for high-efficiency power switching.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring >30V drain-source voltage

Check before use

  • Thermal dissipation requirements at 150A

Key specifications

VDS
30 V
ID
150 A
RDS(on)
2.4 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

8bb1ecc39d4384a14fd30437ba7bf636_2403261736_HXY-MOSFET-ISC026N03L5S-HXY_C22366641.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ISC026N03L5S-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, designed for low RDS(ON) and efficient switching.