ProjectsPricingInsights

ISC027N10NM6ATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ISC027N10NM6ATMA1 product

ISC027N10NM6ATMA1

MOSFETs - Single

MOSFET100VOptiMOS 6Infineon

The ISC027N10NM6 is a high-performance 100 V N-channel OptiMOS 6 power MOSFET designed for industrial power conversion.

Best for

  • Synchronous rectification
  • High-frequency power conversion

Avoid if

  • Applications requiring low-voltage logic level drive without proper gate buffering

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Drain-Source Voltage
100 V
Drain Current
192 A
On-Resistance
2.7 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

poYBAGN0YoWAVD2zABfWuPOBY-o669.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ISC027N10NM6ATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET from Infineon's OptiMOS 6 family, rated for 100 V and 192 A, housed in a PG-TDSON-8 FL package.