IX4351NETR Datasheet, Specs, Alternatives & ECAD | Littelfuse/IXYS | PartGenie

AI summary

IX4351NETR product

The IX4351NE is a high-performance 9A low-side gate driver optimized for SiC MOSFETs and IGBTs, featuring integrated desaturation protection and negative bias generation.

Best for

SiC MOSFET gate driving
High-power IGBT applications
Industrial power conversion

Avoid if

Applications requiring high-side driving without level shifting

Check before use

Thermal pad connection requirements
Charge pump component values

Key specifications

Peak Output Current: 9A
Supply Voltage: -10V to +25V
Propagation Delay: 75ns (Turn-on)

Compliance & Environment

RoHS: RoHS Compliant
REACH: -
MSL: MSL 1
ECCN: -
HTSUS: -

Application

Power InvertersEV Charging

Datasheet

2bd655e10db8457303f5a0532c26543a_IX4351NE.pdf

800 KB

CAD Models

Download ECAD models for IX4351NETR: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 9A low-side gate driver IC specifically designed for SiC MOSFETs and high-power IGBTs, providing robust protection features.