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IXBF55N300 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXBF55N300 product

IXBF55N300

Component

High VoltageBIMOSFETIsolated

The IXBF55N300 is a high-voltage 3000V BIMOSFET designed for demanding power switching applications requiring high isolation and power density.

Best for

  • High-voltage power conversion
  • Resonant power supplies

Avoid if

  • Low-voltage applications where lower RDS(on) MOSFETs are more efficient

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VCES
3000 V
IC110
34 A
VCE(sat)
3.2 V

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial

Datasheet

6f8adf796025f7833773dd1aaa723cc9_media.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXBF55N300: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a monolithic BIMOSFET transistor capable of blocking up to 3000V, housed in an electrically isolated ISOPLUS i4-Pak package.