ProjectsPricingInsights

IXBH12N300 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXBH12N300 product

IXBH12N300

Transistors - IGBTs - Single

High VoltageBIMOSFETIGBT

The IXBH12N300 is a high-voltage BIMOSFET transistor designed for demanding power applications requiring up to 3000V blocking capability.

Best for

  • Laser generators
  • Capacitor discharge circuits
  • High-voltage power supplies

Avoid if

  • Low-voltage applications where lower-cost MOSFETs are sufficient

Check before use

  • Thermal management requirements due to 160W power dissipation

Key specifications

VCES
3000 V
IC110
12 A
VCE(sat)
3.2 V

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power SuppliesLaser Generators

Datasheet

IXYS-S-A0008595151-1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXBH12N300: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage, high-gain BIMOSFET monolithic bipolar MOS transistor rated for 3000V and 12A.