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IXBH42N250 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXBH42N250 product

IXBH42N250

Transistors - IGBTs - Single

High VoltageIGBTPower Switching

The IXBH42N250 is a high-performance 2500V BIMOSFET designed for demanding high-voltage power switching applications.

Best for

  • High-voltage power conversion
  • Industrial power supplies

Avoid if

  • Low-voltage applications where lower VCE(sat) devices are more efficient

Check before use

  • Gate drive voltage requirements
  • Thermal dissipation path

Key specifications

VCES
2500 V
IC (25°C)
104 A
VCE(sat)
3.0 V

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial

Datasheet

5900e1a6f0f288f31d449d1fa3836e3c_Littelfuse_IXYS&IXBH42N250.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXBH42N250: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage, high-gain BIMOSFET monolithic bipolar MOS transistor rated for 2500V and 104A.