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IXBH5N160G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXBH5N160G product

IXBH5N160G

Transistors - IGBTs - Single

High VoltageBIMOSFETPower Switching

The IXBH5N160G is a 1600V, 5.7A BIMOSFET in a TO-247AD package, designed for high-voltage, high-frequency switching applications.

Best for

  • High-voltage power conversion
  • High-frequency switching

Avoid if

  • Low-voltage applications where standard MOSFETs are more efficient

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VCES
1600 V
IC25
5.7 A
VCE(sat)
4.9 V
tf
70 ns

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial Converters

Datasheet

3bb813cfc499fd727213cc481cc1fb07_littelfuse_discrete_igbts_bimosfet_ixb_5n160g_datasheet.pdf.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXBH5N160G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage Monolithic Bipolar MOS Transistor (BIMOSFET) from IXYS, combining the control characteristics of a MOSFET with the high-voltage performance of an IGBT.