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IXBH6N170 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXBH6N170 product

IXBH6N170

Transistors - IGBTs - Single

IGBT1700VBIMOSFETPower Transistor

The IXBH6N170 is a high-voltage 1700V BIMOSFET designed for power switching applications requiring high blocking voltage and low conduction losses.

Best for

  • Power supplies
  • UPS
  • Laser generators

Avoid if

  • Low voltage applications where lower VCE(sat) devices are more efficient

Check before use

  • Gate drive voltage and thermal dissipation

Key specifications

VCES
1700 V
IC90
6 A
VCE(sat)
3.4 V

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power SuppliesIndustrial

Datasheet

163458.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXBH6N170: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1700V, 6A BIMOSFET monolithic bipolar MOS transistor from IXYS, optimized for high-voltage power applications.