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IXBT2N250 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXBT2N250 product

IXBT2N250

Transistors - IGBTs - Single

High VoltageBIMOSFETPower Transistor

The IXBT2N250 is a high-voltage 2500V BIMOSFET designed for specialized power switching applications.

Best for

  • Resonant power supplies
  • Laser generators
  • Capacitor discharge circuits

Avoid if

  • High-current applications exceeding 2A
  • Low-voltage designs where standard MOSFETs are more efficient

Check before use

  • Thermal management requirements
  • Gate drive voltage levels

Key specifications

VCES
2500 V
IC110
2 A
VCE(sat)
3.80 V

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power SuppliesIndustrial

Datasheet

IXBT2N250-IXYS-datasheet-135086119.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXBT2N250: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The IXBT2N250 is a monolithic Bipolar MOS transistor (BIMOSFET) from IXYS, featuring a 2500V blocking voltage and 2A continuous collector current rating.