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IXDN602SIATR AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXDN602SIATR product

IXDN602SIATR

Amplifiers

Gate DriverMOSFET DriverIGBT DriverNon-Inverting

The IXDN602SIATR is a high-speed, dual non-inverting low-side gate driver optimized for driving power MOSFETs and IGBTs in high-frequency applications.

Best for

  • High-frequency power switching
  • MOSFET/IGBT gate driving

Avoid if

  • Applications requiring isolated gate driving (this is a non-isolated driver)

Check before use

  • Gate charge (Qg) of the target MOSFET/IGBT
  • PCB layout for high-speed switching

Key specifications

Peak Current
2A
Supply Voltage
4.5V - 35V
Rise/Fall Time
7.5ns / 6.5ns
Configuration
Non-Inverting

Compliance & Environment

RoHS
RoHS Compliant
REACH
nan
MSL
MSL 1
ECCN
nan
HTSUS
nan

Application

Power ManagementMotor Control

Datasheet

35a97bc6aa90dcb6dbc282bcead79968_IXD_602.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXDN602SIATR: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual non-inverting gate driver capable of sourcing and sinking 2A of peak current, designed for high-speed switching of MOSFETs and IGBTs.