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IXFH26N50P AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXFH26N50P product

IXFH26N50P

MOSFETs - Single

MOSFETN-Channel500VPower

The IXFH26N50P is a high-performance 500V, 26A N-Channel Power MOSFET designed for high-power density applications.

Best for

  • Industrial power supplies
  • Switching applications

Avoid if

  • Low-voltage battery-powered designs where RDS(on) is critical

Check before use

  • Thermal design and gate drive voltage levels

Key specifications

VDSS
500 V
ID25
26 A
RDS(on)
230 mΩ
PD
400 W

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

bef87aa287a661f96613d226f84ec882_2304270930_Littelfuse-IXYS-IXFH26N50P_C5447839.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXFH26N50P: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET featuring a fast intrinsic diode and avalanche rating, suitable for high-efficiency power conversion.