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IXFN32N120P AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXFN32N120P product

IXFN32N120P

MOSFETs - Single

1200VMOSFETSOT-227BHigh Voltage

The IXFN32N120P is a high-voltage 1200V, 32A N-Channel Power MOSFET in a SOT-227B package, optimized for high-power density applications.

Best for

  • High-voltage power conversion
  • Industrial power supplies

Avoid if

  • Low-voltage, low-power applications

Check before use

  • Thermal dissipation requirements
  • Mounting torque

Key specifications

Vdss
1200 V
Id
32 A
RDS(on)
310 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial

Datasheet

965f565ece377acd0a3a26518da7dc8e_littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn32n120p_datasheet.pdf.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXFN32N120P: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Polar HiPerFET Power MOSFET featuring a 1200V drain-source voltage and 32A continuous drain current, housed in a miniBLOC package.