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IXTA02N250HV AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXTA02N250HV product

IXTA02N250HV

MOSFETs - Single

High VoltageMOSFETN-Channel

The IXTA02N250HV is a high-voltage N-Channel MOSFET designed for demanding power applications requiring up to 2500V blocking capability.

Best for

  • High voltage power supplies
  • Capacitor discharge circuits

Avoid if

  • Low voltage applications where lower RDS(on) devices are more efficient

Check before use

  • Thermal dissipation requirements
  • Creepage and clearance distances for 2500V

Key specifications

VDSS
2500 V
ID25
200 mA
RDS(on)
450 Ω

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power

Datasheet

IXTA02N250HV-IXYS-datasheet-136295696.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXTA02N250HV: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage N-Channel enhancement mode power MOSFET from IXYS (Littelfuse), capable of blocking up to 2500V.