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IXTA1N200P3HV AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXTA1N200P3HV product

IXTA1N200P3HV

MOSFETs - Single

High VoltageMOSFETN-Channel

The IXTA1N200P3HV is a high-voltage N-Channel MOSFET designed for demanding applications requiring up to 2000V blocking capability.

Best for

  • High voltage power supplies
  • Capacitor discharge circuits

Avoid if

  • Low voltage applications where lower RDS(on) is required

Check before use

  • Thermal design and creepage/clearance distances

Key specifications

VDSS
2000 V
ID
1 A
RDS(on)
40 Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesPulse Circuits

Datasheet

a16e2fa86e54a2b79e6418da4d52930d_littelfuse_discrete_mosfets_n-channel_standard_ixt_1n200p3_datasheet.pdf.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXTA1N200P3HV: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 2000V, 1A N-Channel Enhancement Mode Power MOSFET optimized for high-voltage power supplies and pulse circuits.